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BL FEATURES o o o GALAXY ELECTRICAL 1N4150 VOLTAGE RANGE: 50 V CURRENT: 150 m A DO - 35 SMALL SIGNAL SWITCHING DIODE Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation MECHANICAL DATA o o o Case: DO-35,glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25ae ambient temperature unless otherwise specified. MAXIMUM RATINGS 1N4150 Reverse voltage Peak reverse voltage Average forward rectified current VR=0V Forward surge current at t=1s Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature range VR VRM IO IFSM Ptot Rthja Tj TSTG 50 50 150 4.0 500 500 175 -65 --- + 175 ae UNITS V V mA A mW K/W ae ELECTRICAL CHARACTERISTICS MIN. Forward voltage at IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA Leakage current @VR=50V,TJ=25ae VR=50V,TJ=150ae Capacitance at VR=0V,f=1MHZ,VHF=50mV Reverse recovery time IF=IR=(10to100mA),iR=0.1xIR RL=100| www.galaxycn.com MAX. 0.62 0.74 0.86 0.92 1.0 0.1 100 2.5 4.0 UNITS 0.54 0.66 VF 0.76 0.82 0.87 IR Ctot trr - V A pF ns Document Number 0268022 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE 1N4150 FIG.2 -- FORWARD CHARACTERISTICS mW 1000 900 800 mA 10 3 10 2 Ptot 700 600 500 400 300 200 100 0 0 100 200ae IF 10 TJ=25 1 10 -1 TA 10 -2 0 0.5 VF 1V FIG.3 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 10 4 10 3 10 2 10 VR=50V 1 0 10 0 20 0ae www.galaxycn.com Document Number 0268022 BLGALAXY ELECTRICAL 2. |
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